Ir2110 Mosfet Gate Driver Ic

Now in this tutorial bootstrap circuit method to drive a high side mosfet will be discussed.

Ir2110 mosfet gate driver ic.

Rc circuit model for a gate driver with mosfet output stage and power device as a capacitor. Power mosfet models figure 2c is the switching model of the mosfet. The use of ir2110 gate driver ic has also been discussed in the same tutorial. By apogeeweb ir2110 2110 ir2110 datasheet ir2110 pinout ir2110 circuit mosfet driver igbt driver.

Eicedriver 2edl is a 600v half bridge gate driver ic family basing on level shifter soi silicon on insulator technology which integrates low ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. International rectifiers ir2110 mosfet driver can be used as a high side and low side mosfet driver. The most important parasitic components that influences switching performance are shown in this model. Their respective roles are discussed in section 2 3 which is dedicated to the switching procedure of the device.

R ds on also directly affects power dissipation internal to the driver. Ir2112 mosfet igbt driver features. The range of separate voltage supply is from 3 3v to 20v and supply range of gate driver is from 10 to 20 v. 500 v high side and low side gate driver ic with shutdown.

By using a single ic a half bridge circuit can be operated in which one mosfet is in high side configuration and another one is in the low side configuration. It has a feature of floating channel which can perform bootstrap operation. The ir2110 ic is one of the high speed and high voltage gate driver ics for igbt and power mosfet. It can tolerate negative transient voltage.

Ir2110 comes in 14 pin through hole pdip package and the 16 pin surface mount soic package. It has a floating circuit to handle to bootstrap operation. In h bridge used in pure sine wave inverter design 2 mosfet are used as high side mosfet and 2 mosfet is used as low side mosfet. Features floating channel designed for bootstrap operation fully operational to 500v or 600v tolerant to negative transient voltage dv dt immune gate drive supply range from 10 to 20v undervoltage lockout for both channels 3 3v logic compatible separate logic supply range from 3 3v to 20v.

Fundamentals of mosfet and igbt gate driver circuits figure 2. High and low side driver ic with source current 0 25 a and sink current 0 5 a. The ic is having independent low and high side output channel. For a specific drive current the lower value of r ds on allows higher r ext to be used.